The M01-NVSRAM is a non volatile static RAM, organized as 1024k x 32bit, for PCI Express® direct access (memory-mapped read/write to a linear address space, aka MMIO).
The M01-NVSRAM is housed on a 2280 size M.2 module, suitable for any PCI Express® based M.2 host connector (M-keyed). The data transfer between host (CPU) and SRAM is controlled by an FPGA via PCI Express® . Other than a normal SSD, the M01-NVSRAM is not a block device, and does not require a file system or software drivers for data storage. The M01-NVSRAM supports memory-mapped I/O in a BYTE, WORD and DWORD mode instead.
The M01-NVSRAM is equipped with two 16-Mbit nvSRAMs, to be read and written an infinite number of times. Automatic store to so called QuantumTrap nonvolatile elements is initiated on power-down, and recall to SRAM is managed at power-up. A simple on-board capacitor delivers sufficient energy for the store operation at power-down, and no battery is needed for backup. Data retention is guaranteed over 20 years.
The M01-NVSRAM is suitable e.g. for industrial applications with need for a reliable power fail safe data buffer.
M.2 Features
- M.2
- M.2 Type 2280 module (according to the PCI Express® M.2 Specification)
- Socket 3 System Interface, module key M, PCIe-based adapter pinout (PCIe x1 Gen1)
- 2280-D5-M double sided module (4.2H host socket recommended)
- +3.3V, 300mA max.
- Random read/write access tbd MB/s
- Custom specific M.2 module design on request
FPGA Features
- Lattice ECP5, 45k LUTs, SERDES 2.5Gbps
- Industrial temperature
- PCI Express® interface used for memory-mapped read/write transactions in the memory address space
- Control function for one or two attached nvSRAMs organized x 32
- Custom specific FPGA firmware on request
SRAM Features
- 2 x Cypress CY14B116S (512kx32, 16Mbit each) nvSRAM, 4MByte in total, AutoStore/Recall
- Embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory
- Infinite read, write, and recall cycles
- 1 million store cycles to QuantumTrap elements (automatically on power-down event)
- Data retention 20 years
- Industrial temperature
Environmental & Regulatory
- Designed & manufactured in Germany
- Certified quality management according to ISO 9001
- Long term availability
- Rugged solution
- Coating, sealing, underfilling on request
- RoHS compliant
- Operation temperature -40°C...+85°C (industrial temperature range)
- Storage temperature -40°C...85°C, max. gradient 5°C/min
- Humidity 5% ... 95% RH non condensing
- Altitude -300m ... +3000m
- Shock 15g 0.33ms, 6g 6ms
- Vibration 1g 5-2000Hz
- MTBF 59.3 years
- EC Regulations EN55022, EN55024, EN60950-1 (UL60950-1/IEC60950-1)
Applications
- Fast memory-mapped random access read/write transfers
- No file system required, operating system not necessary involved
- Code examples available for download
- Suitable for real time applications
- Industrial applications with need for a reliable power fail safe data buffer
EKF stellt mit dem M01-NVSRAM ein
nichtflüchtiges statisches RAM Modul vor,
organisiert zu 1024k x 32bit. Direkter wahlfreier
Schreib- und Lesezugriff erfolgt per PCI Express®
über einen linearen Adressraum (MMIO).
Anders als bei einem SSD Modul ist das
M01-NVSRAM kein Block Device, und benötigt
daher kein Filesystem und Treiber. Stattdessen
unterstützt das M01-NVSRAM BYTE, WORD
und DWORD Zugriffe auf den PCIe®
Adressraum.
Das M01-NVSRAM Modul verwendet den M.2
Formfaktor in der Größe 2280 und eignet sich
für PCI Express® basierende M.2 Steckplätze
(M-Key). Der Datenaustausch wird über ein
FPGA organisiert.
Die Datenspeicherung erfolgt automatisch bei
Power-Down. Der Datenerhalt wird über 20
Jahre garantiert und erfordert keine Batterie.
Das M01-NVSRAM Modul eignet sich vor allem
für industrielle Anwendungen mit Bedarf für
einen ausfallsicheren Datenpuffer.
M.2 Features
- M.2
- M.2 Type 2280 module (according to the PCI Express® M.2 Specification)
- Socket 3 System Interface, module key M, PCIe-based adapter pinout (PCIe x1 Gen1)
- 2280-D5-M double sided module (4.2H host socket recommended)
- +3.3V, 300mA max.
- Random read/write access tbd MB/s
- Custom specific M.2 module design on request
FPGA Features
- Lattice ECP5, 45k LUTs, SERDES 2.5Gbps
- Industrial temperature
- PCI Express® interface used for memory-mapped read/write transactions in the memory address space
- Control function for one or two attached nvSRAMs organized x 32
- Custom specific FPGA firmware on request
SRAM Features
- 2 x Cypress CY14B116S (512kx32, 16Mbit each) nvSRAM, 4MByte in total, AutoStore/Recall
- Embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory
- Infinite read, write, and recall cycles
- 1 million store cycles to QuantumTrap elements (automatically on power-down event)
- Data retention 20 years
- Industrial temperature
Environmental & Regulatory
- Designed & manufactured in Germany
- Certified quality management according to ISO 9001
- Long term availability
- Rugged solution
- Coating, sealing, underfilling on request
- RoHS compliant
- Operation temperature -40°C...+85°C (industrial temperature range)
- Storage temperature -40°C...85°C, max. gradient 5°C/min
- Humidity 5% ... 95% RH non condensing
- Altitude -300m ... +3000m
- Shock 15g 0.33ms, 6g 6ms
- Vibration 1g 5-2000Hz
- MTBF 59.3 years
- EC Regulations EN55022, EN55024, EN60950-1 (UL60950-1/IEC60950-1)
Applications
- Fast memory-mapped random access read/write transfers
- No file system required, operating system not necessary involved
- Code examples available for download
- Suitable for real time applications
- Industrial applications with need for a reliable power fail safe data buffer
Please contact systerra for informations and ordering options
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